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| www.fairchildsemi.com KA5H0380R/KA5M0380R/KA5L0380R SPS Features * * * * * * * * * Precision fixed operating frequency (100/67/50kHz) Low start-up current(typ. 100uA) Pulse by pulse current limiting Over current protection Over voltage protecton (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode Description The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loopcompensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram Vcc 5V Vref UVLO GOOD LOGIC INTERNAL BIAS DRAIN SFET OSC 9V 5 uA 1 mA _ 2.5R 1R + _ THERMAL S/D POWER ON RESET + L.E.B S Q R FB Rsens S R Q 7.5V GND 27V + _ Rev. .5.0 (c)2000 Fairchild Semiconductor International KA5H0380R/KA5M0380R/KA5L0380R Absolute Maximum Ratings Characteristic Drain-source (GND) voltage (1) Symbol VDSS VDGR VGS IDM (3) Value 800 800 30 12 95 10 3.0 2.1 30 -0.3 to VSD 35 0.28 -25 to +85 -55 to +150 Unit V V V ADC mJ A ADC ADC V V W W/C C C Drain-Gate voltage (RGS=1M) Gate-source (GND) voltage Drain current pulsed Avalanche current (4) Continuous drain current (TC=25C) Continuous drain current (TC=100C) Supply voltage Analog input voltage range Total power dissipation Operating temperature Storage temperature (2) Single pulsed avalanche energy EAS IAS ID ID VCC VFB PD (watt H/S) Derating TOPR TSTG Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25C 4. L=13H, starting Tj=25C 2 KA5H0380R/KA5M0380R/KA5L0380R Electrical Characteristics (SFET part) (Ta = 25C unless otherwise specified) Characteristic Drain-source breakdown voltage Symbol BVDSS Test condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) Min. 800 - - - 1.5 - - - - - - - - - - Typ. - - - 4 2.5 779 75.6 24.9 40 95 150 60 - 7.2 12.1 Max. - 250 1000 5 - - - - - - - - 34 - - nC nS pF Unit V A A S Zero gate voltage drain current IDSS Static drain-source on resistance (note) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge Note: Pulse test: Pulse width < 300S, duty < 2% 1 S = --R (note) RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 3 KA5H0380R/KA5M0380R/KA5L0380R Electrical Charcteristics (SFET part) (Continued) (Ta = 25C unless otherwise specified) Characteristic REFERENCE SECTION Output voltage (1) Temperature Stability (1)(2) Symbol Test condition Min. Typ. Max. Unit Vref Vref/T Ta=25C -25CTa+85C 4.80 - 5.00 0.3 5.20 0.6 V mV/C OSCILLATOR SECTION Initial accuracy Initial accuracy Initial accuracy Frequency change with temperature (2) PWM SECTION Maximum duty cycle Maximum duty cycle FEEDBACK SECTION Feedback source current Shutdown delay current IFB Idelay Ta=25C, 0V OVER CURRENT PROTECTION SECTION Over current protection UVLO SECTION Start threshold voltage Minimum operating voltage TOTAL STANDBY CURRENT SECTION Start current Operating supply current (control part only) SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection (1) IL(max) Max. inductor current - After turn on 1.89 2.15 2.41 A Vth(H) Vth(L) 8.4 14 - - 9 15 9.6 16 V V IST IOPR VCC=14V VCC<28 0.1 7 0.17 12 mA mA VSD TSD VOVP Vfb>6.5V - VCC>24V 6.9 140 25 7.5 160 27 8.1 - 29 V C V NOTE: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 4 KA5H0380R/KA5M0380R/KA5L0380R Typical Performance Characteristics 101 VGS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 100 101 ID, Drain Current [A] ID, Drain Current [A] 100 150oC @ Notes: 1. 300 s Pulse Test 2. TC = 25oC 10-1 100 101 10-1 2 25oC -25oC @Notes: 1. VDS = 30 V 2. 300 s PulseTest 6 8 10 4 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Thansfer Characteristics 8 7 Fig3. On-Resistance vs. Drain Current 10 Drain-Source On-Resistance 6 5 4 3 2 1 0 Vgs=20V IDR, Reverse Drain Current [A] Vgs=10V RDS(on) , [ ] 1 150oC 25oC @Note : Tj=25 0 1 2 3 4 0.1 0.4 0.6 0.8 @Notes: 1. VGS = 0V 2. 300 s Pulse Test 1.0 ID,Drain Current VSD, Source-Drain Voltage [V] Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 1000 900 800 700 Ciss = Cgs + Cgd (Cds = shorted) 10 VDS=160V VGS,Gate-Source Voltage[V] Coss = Cds + Cgd Crss = Cgd 8 VDS=400V VDS =640V Capacitance [pF] 600 500 400 300 200 100 0 100 Ciss 6 4 Coss Crss 101 2 @Note : ID=3.0A 0 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) 1.2 2.5 Drain-Source Breakdown Voltage 2.0 1.1 Drain-Source On-Resistance BVDSS, (Normalized) RDS(on), (Normalized) 1.5 1.0 1.0 0.9 @ Notes : 1. VGS = 0V 2. ID = 250A 0.5 @ Notes: 1. VGS = 10V 2. ID = 1.5 A 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T J, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature 102 Figure 8. On-Resistance vs. Temperature 3.5 ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 101 100 s 1 ms 100 10 ms DC 10 s 3.0 2.5 ID, Drain Current [A] 103 2.0 1.5 1.0 0.5 0.0 10-1 @ Notes : 1. TC = 25 oC 2. TJ = 150 C 3. Single Pulse o 10 -2 101 102 40 60 80 100 120 140 VDS , Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature Thermal Response 100 D=0.5 0.2 0.1 10- 1 0.05 0.02 0.01 @ Notes : 1. Z J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) J C (t) , single pulse Z 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] Figure 11. Thermal Response 6 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (control part) (These characteristic graphs are normalized at Ta = 25C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Figure 1. Operating Frequency Figure 2. Feedback Source Current Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Fig.4 Max Inductor Current Ipeak 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Figure 3. Operating Current Figure 4. Max Inductor Current 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Fig.6 Start Threshold Voltage Istart 1.1 0.9 0.7 0.5 -25 Vstart 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 5. Start up Current Figure 6. Start Threshold Voltage 7 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) (These characteristic graphs are normalized at Ta = 25C) Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 8 KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) (These characteristic graphs are normalized at Ta = 25C) Fig.13 Soft Start Voltage 1.15 1.1 1.05 2.5 2 1.5 Fig.14 Drain Source Turn-on Resistance Vss 1 0.9 0.95 0.85 -25 Rdson 1 0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 Figure13. Soft Start Voltage Figure 14. Drain Source Turn-on Resistance 9 KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions TO-220F-4L 10 KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions (Continued) TO-220F-4L (Forming) 11 KA5H0380R/KA5M0380R/KA5L0380R Ordering Information Product Number KA5H0380R-TU KA5H0380R-YDTU KA5M0380R-TU KA5M0380R-YDTU KA5L0380R-TU KA5L0380R-YDTU TU : Non forming Type YDTU :forming Type Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Rating 800V, 3A 800V, 3A 800V, 3A Operating Temperature -25C to +85C -25C to +85C -25C to +85C 12 KA5H0380R/KA5M0380R/KA5L0380R 13 KA5H0380R/KA5M0380R/KA5L0380R LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 7/24/00 0.0m 001 Stock#DSxxxxxxxx 2000 Fairchild Semiconductor International 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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